FDS8670
Overview
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.
- 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant
